kw.\*:("Dispositif semiconducteur")
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Submicron trenching of semiconductor nanostructuresLEE, K. Y; SMITH, T. P; FORD, C. J. B et al.Applied physics letters. 1989, Vol 55, Num 7, pp 625-627, issn 0003-6951, 3 p.Article
Selected Papers from ISDRS 2011AKTURK, Akin; ILIADIS, Agis A.Solid-state electronics. 2012, Vol 78, issn 0038-1101, 169 p.Conference Proceedings
30 Years of accomplishments in compound semiconductor materials and devices attributable to Prof. Lester F. EastmanYODER, Max N.IEEE Lester Eastman conference on high performance devices. 2002, pp 34-39, isbn 0-7803-7478-9, 6 p.Conference Paper
Review of analytical models for the study of highly doped regions of silicon devicesCUEVAS, A; BALBUENA, M. A.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 3, pp 553-560, issn 0018-9383, 8 p.Article
Nonpolar and Semipolar Group III Nitride-Based MaterialsSPECK, J. S; CHICHIBU, S. F.MRS bulletin. 2009, Vol 34, Num 5, issn 0883-7694, [49 p.]Serial Issue
Noise in devices and circuits II (Maspalomas, 26-28 May 2004)Danneville, François; Bonani, Fabrizio; Deen, M. Jamal et al.SPIE proceedings series. 2004, isbn 0-8194-5396-X, XXXI, 588 p, isbn 0-8194-5396-XConference Proceedings
High-rare deposition of hydrogenated amorphous silicon films and devicesLUFT, W.Applied physics communications. 1988, Vol 8, Num 4, pp 239-298, issn 0277-9374Article
Three decades of our graduate research and education in compound semiconductor materials and devicesEASTMAN, Lester F.IEEE Lester Eastman conference on high performance devices. 2002, pp 4-9, isbn 0-7803-7478-9, 6 p.Conference Paper
A design model for surface-termination optimization of off-state semiconductor devicesWADDELL, J. B; MIDDLETON, J; BOARD, K et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 5, pp 943-953, issn 0018-9383, 11 p.Article
Analytical two-dimensional model for minority-carrier diffusion from small-geometry pn junctionSTROLLO, A. G. M; SPIRITO, P.Electronics Letters. 1989, Vol 25, Num 2, pp 130-131, issn 0013-5194, 2 p.Article
High-voltage and high-current automatic crowbarCLIFFE, R. J; BROWN, J; SMITH, I. R et al.Journal of physics. D, Applied physics (Print). 2001, Vol 34, Num 11, pp 1740-1742, issn 0022-3727Article
Design of a semiconductor thermoelectric generator for remote subsea wellheadsAUCKLAND, D. W; SHUTTLEWORTH, R; LUFF, A. C et al.IEE proceedings. Electric power applications. 1995, Vol 142, Num 2, pp 65-70, issn 1350-2352Article
L'électronique de puissance dans l'imagerie médicale = Power electronics in medical imageryLAEUFFER, J; SALESSES, J.Revue générale de l'électricité (Paris). 1992, Num 6, pp 61-67, issn 0035-3116Article
Sampling analysis in the DPM rangeWURNIK, F.Microelectronics and reliability. 1990, Vol 30, Num 1, pp 35-38, issn 0026-2714Article
Fabrication of lateral planar InP/GaInAsP heterojunction bipolar transistor by selective area epitaxial growthYOO, H.-J; HAYES, J. R; CANEAU, C et al.Electronics Letters. 1989, Vol 25, Num 3, pp 191-192, issn 0013-5194, 2 p.Article
MOS flat-band capacitance method at low temperaturesHUANG, C. -L; GILDENBLAT, G. S.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 8, pp 1434-1439, issn 0018-9383, 6 p.Article
High temperature metallisation for GaAs device processingMORGAN, D. V; THOMAS, H; ANDERSON, W. T et al.Physica status solidi. A. Applied research. 1988, Vol 110, Num 2, pp 531-536, issn 0031-8965Article
Two-dimensional device simulation progra: 2DPGAUR, S. P; HABITZ, P. A; PARK, Y.-J et al.IBM journal of research and development. 1985, Vol 29, Num 3, pp 242-251, issn 0018-8646Article
Aluminum wire for thermosonic ball bonding in semiconductor devicesGEHMAN, B. L; RITALA, K. E; ERICKSON, L. C et al.Solid state technology. 1983, Vol 26, Num 10, pp 151-158, issn 0038-111XArticle
Motorola Workshop on Computational Mterials and ElectronicsPhysica status solidi. B. Basic research. 2001, Vol 226, Num 1, pp 1-255, issn 0370-1972, 241 p.Conference Proceedings
Electron-beam-controlled high-power semiconductor switchesSHOENBACH, K. H; LAKDAWALA, V. K; STOUDT, D. C et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 9, pp 1793-1802, issn 0018-9383, 10 p., 1Article
MOS device modeling at 77 KSELBERHERR, S.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 8, pp 1464-1474, issn 0018-9383, 11 p.Article
Study on Bi-CMOS devices utilising SIMOX technologyMATSUMOTO, S; OHNO, T; IZUMI, K et al.Electronics Letters. 1989, Vol 25, Num 14, pp 904-905, issn 0013-5194, 2 p.Article
Commutateur de puissance dans la gamme des microsecondes ― le dynistor à enclenchement réversibleGREKHOV, I. V; GORBATYUK, A. V; KOSTINA, L. S et al.Žurnal tehničeskoj fiziki. 1983, Vol 53, Num 9, pp 1822-1826, issn 0044-4642Article
Industry-compatible applications for visible laser energy in semiconductor productionRICHARDSON, T. R; BOOGAARD, J.Solid state technology. 1982, Vol 25, Num 3, pp 102-104, issn 0038-111XArticle